MacGyverS2000
New Blood
- Joined
- Sep 30, 2008
- Messages
- 22
An excellent question, and one I'm happy to answer for everyone else's benefit. You make the erroneous assumption that a block erase command erases an entire block of memory in an instant. You can time with a stopwatch how long it takes a 128Mb flash to erase all of its blocks. Think on the order of a full second to erase a single block (max spec is typically a full 4 seconds to erase a single block)!As he has quoted, the block erase size is approximately 128K for data blocks. We are talking about 14K of data.
My question still stands: If gates are tied together for block erase, how does just a few of these gates received the erase voltage without wiping out the entire block?
This should point out the fact that the entire block isn't erased at once, but in lines (columns or rows, take your pick). Care to take a guess what would happen if the erase process was interrupted in the middle? Since the write latency must be <500ms, this tells you right away the firmware must continually suspend the block erasure process to write incoming frame data. I won't bother getting into the myriad of possible problems these suspends can have on data integrity, particularly in a transient-rich electrical environment.
You need to spend some time looking at hot-electron injection and quantum tunneling... these are the two processes by which the transistors (MOSFETS) change their state (at least for a NOR-based package). Flash chips contain their own charge pump to create the higher programming voltage, and I think it should be quite obvious by now that a charge pump is going to have some weird outputs during transients (where under the right conditions "ground" can actually be at a higher voltage then "power").Furthermore, as power decays how is the gate biased with sufficient voltage such that the transistors are able to change state.
So I say yet again, your theories are easily blown out of the water. I'm not pulling the stuff out of my ass, these are well known and (mostly) well-defined failure modes. The next step to proving all of this to you will involve semiconductor physics, something I'm not prepared to waste time discussing and few here are informed enough to comprehend without heavy explanation.
My previous statement stands, I have zero interest in my name being associated with your claims. You have repeatedly shown a penchant for ignoring my direct answers to your specific questions when push comes to shove about your overall claims, so I will no longer increase my risk of carpal tunnel just to argue minutiae that is no longer relevant. I never had delusions about friendships here (my statement was metaphorical in nature), but I obviously hoped for too much when I thought pure scientific fact would be taken for its own value and not abused.