A voltaic pile or battery delivers 1 qV per electron. The presence of this 1 qV is accounted for by the V difference in the Fermi levels.
You need something to deliver another qV "polarization energy" in addition to the Fermi level change.
OK, I am slowly realizing what your problem has been all along: Not one of you understands what the difference is between an SIS Josephson junction
without a voltage V
JS over the junction and an SIS Josephson junction
with a voltage V
JS over the junction.
Since these experiments have been done more than 40 years ago, I expected that people who claim that they know something about superconduction, would have known what the basic experimental results are before mouthing off on an open forum on how the results must be interpreted. No wonder I could not follow your arguments: Not in my wildest dreams could I have expected that people could know
so little about a subject and then still arrogantly argue about something they obviously
NEVER understood.
Now let us carefully look at the measured results step-by-step:
1. You have an SIS in the superconducting state switched into a circuit which will cause an applied voltage V
source over the SIS
if it were not in the superconducting state. But
it is in the superconducting state so you cannot measure a voltage over any two points along the SIS; specifically also not over the insulating junction. When you increase the source voltage V
source from zero, you find that a current immediately starts to flow
even though the voltage over the junction VJ remains zero (or as Ziggurat will argue against all sensible logic; a voltage is there but cannot be measured; but if you can measure it you do not have supeconduction

). Nonetheless on the I-V
J diagram, the current increases
at VJ=0 until it reaches a maximum value I
0; whence it falls to zero with a further increase of source voltage. With this further increase in source voltage, a non-zero voltage V
J can now be measured over the junction, while the current remains zero until a critical voltage V
JC is reached at which the current suddenly increases and then follows the rest of the curve as one would expect for the SIS device when it is not superconducting.
2. Now you put a capacitor-device in parallel to the source voltage: When the SIS is non-superconducting, this device does not add any extra voltage to the source voltage. In fact, when the SIS is superconducting this capacitor device also does not add to the source voltage V
source; but now there is a difference to what is measured when the SIS is non-superconducting. A voltage V
JS appears over the insulating junction without changing the applied voltage V
source in any manner.
The charge carriers just outside the injection contact to the SIS are still at an energy qVsource higher than the charge carriers which has just excited the SIS at the other side; even though you can now measure a voltage VJS over the junction. To explain how this is possible should have been Josephson'a priority; However. he claimed that the abacadabra of "phase slippage" can explain it; while it cannot.
3. Now consider a superconducting phase according to my model: It consists of localized orbitals trapped by positive charges; and
all these orbitals are in the lowest energy state, which they can be in, or else they will not be forming a superconducting phase. Now apply an electric-field. The orbitals polarize and cancel the applied electric field at their positions. This increases their energy to be more than the energy they have had before the electric-field has been switched on. Are these orbitals still in a lowest energy state as required to form a superconducting phase? Yes they are, since for as long as the electric-field is there they cannot relax to a lower energy. They can relax to a lower energy when the electric-field is reduced, or they can increase their energy when the electric field is increased; while still being in the lowest energy state possible while the source voltage is being applied.
4. Now let us consider SIS again
without applying a junction voltage by a suitable capacitor device. The electric-field is the same everywhere and the orbitals on both sides of the junction are equally polarized and thus have the same energy.
Now you apply the junction voltage V
JS which causes an energy drop qV
JS over the junction
but without a change in the value of the source voltage. The latter cannot happen when the SIS is not superconducting: It only happens when the SIS is superconducting. Since the total voltage drop over the SIS does not change when adding V
JS over the insulating junction, the voltage appearing over the junction must be caused by shifting some of the voltage which were there before switching on the junction voltage, to appear over the junction. Fortunately the mechanism by which this can happen is inherent in my model; since the charge-carriers one one side of the junction can lose polarization energy relative to the other side of the junction so that the voltage drops over the two S-regions are now different and thus also the electric-fields within them. Thus you end up with the charge-carriers having a difference in energy of 2qV
Js, even though the voltage difference over SIS is the same as it was before switching on the voltage over the junction.
In terms of my model it is then possible for a superconducting charge-carrier to radiate energy 2qV
JS even though the source voltage remains the same as it was before switching on the voltage over the junction": i.e. even though the external charge-carriers being injected into the SIS has only an energy qV
source higher than the charge carriers have after they have been ejected from the SIS.
I thus suggest, that before further making fools of yourselves by indiscriminately mouthing off on this thread, you should go through the mathematics of my model in detail to convince yourselves that Josepson's derivation cannot explain where the junction voltage V
JS comes from while the applied source voltage does not change; while my model can: And my model in addition mandates that the charge-carriers must be singly-charged.